The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Sep. 26, 2001
Hideo Torii, Higashiosaka, JP;
Takeshi Kamada, Nara, JP;
Isaku Kanno, Nara, JP;
Ryoichi Takayama, Suita, JP;
Hideo Torii, Higashiosaka, JP;
Takeshi Kamada, Nara, JP;
Isaku Kanno, Nara, JP;
Ryoichi Takayama, Suita, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb(ZrTi)O(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region () having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region () of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region () having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).