The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Dec. 30, 2002
Applicant:
Michael Eugene Broach, San Mateo, CA (US);
Inventor:
Michael Eugene Broach, San Mateo, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 1/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention increases power efficiency in power FET applications with varying loads. A constant frequency mode can be used without detracting from efficiency. This is accomplished by reducing repetitive gate charge power losses. The present invention controls the channel impedance of the FET using a timed tri-state driver to drive a level of charge associated with the gate of the FET that is appropriate to the load requirements. When the voltage level at the FET gate reaches the appropriate level, the driver is tri-stated, so that the gate does not continue to charge.