The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Jun. 25, 2003
Atsuo Tsunoda, Kashiba, JP;
Atsuo Tsunoda, Kashiba, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A ridge section constructed of a p-type second AlGaInP clad layer, a p-type GaInP interlayerand a p-type GaAs cap layeris formed on an etching stop layer. A step of not smaller than 0.13 μm is formed between the p-type interlayerand the p-type second clad layerby making the p-type interlayerprotrude in both widthwise directions beyond the p-type second clad layer. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layerlocated on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layereffectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.