The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2006

Filed:

Dec. 17, 2003
Applicant:

Sung BO Shim, Kyungki-Do, KR;

Inventor:

Sung Bo Shim, Kyungki-Do, KR;

Assignee:

Hynix Semiconductor Inc., Kyungki-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

The disclosed is a method of programming a flash memory cell, comprising; a step of an over-programming of a flash memory cell to-be-programmed; a first recovering step of the over-programmed flash memory cell by adjusting a gate bias of the flash memory cell; a second recovering step of the over-programmed flash memory cell by setting the gate bias to a voltage of 0V and then adjusting a bulk bias of the over-programmed flash memory cell; a third recovering step of the over-programmed flash memory cell by floating the gate bias and then adjusting the bulk bias of the over-programmed flash memory cell; and a fourth recovering step of the over-programmed flash memory cell by adjusting the bulk bias of the over-programmed flash memory cell using a self-boosting operation.


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Shim, Sung. (2006). Method of programming a flash memory cell and method of programming an nand flash memory using the same (U.S. Patent No. 6999343). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6999343

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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