The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Jan. 29, 2004
Susumu Kurosawa, Kanagawa, JP;
Yuki Fujimoto, Kanagawa, JP;
Susumu Kurosawa, Kanagawa, JP;
Yuki Fujimoto, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A P type substrate is provided on a surface thereof with varactor elements. The varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film is formed on the N well, with a polysilicon layer formed further thereon. On the other hand, the varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film, greater than the gate insulating film in thickness, is formed on the N well. The polysilicon layer is then formed on the gate insulating film. Furthermore, the polysilicon layer is connected to a gate terminal, while the N well is connected to an S/D terminal via Ndiffusion layers.