The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Jul. 23, 2004
Hiroyuki Nakano, Shiga-ken, JP;
Hiroyuki Nakano, Shiga-ken, JP;
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
A high frequency switch includes a main line electrode arranged on a substrate so as to extend between two terminals, a short stub line electrode on the substrate of which one end is connected to a one-side edge of the main line electrode, and the other end is grounded, an open stub line electrode on the substrate of which one end is connected to the other-side edge of the main line which is opposed to the one-side edge, and the other terminal is opened, ground electrodes arranged on the substrate adjacent to the short stub line electrode and the open stub line electrode in the width direction thereof, a semiconductor activation layer disposed in a portion of the substrate between the side edge at least on the one-end side of the open stub line electrode and the ground electrode so as to extend under the open stub line electrode and under the ground electrode, and a gate electrode disposed on the semiconductor activation layer between the open stub line electrode and the ground electrode so as to extend along the longitudinal direction of the open stub line electrode, whereby an FET structure is provided.