The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Jun. 27, 2002
Applicants:
Naoki Makita, Nara, JP;
Misako Nakazawa, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Takuya Matsuo, Osaka, JP;
Inventors:
Naoki Makita, Nara, JP;
Misako Nakazawa, Kanagawa, JP;
Hideto Ohnuma, Kanagawa, JP;
Takuya Matsuo, Osaka, JP;
Assignees:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
Abstract
In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n-type impurity and a p-type impurity with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.