The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2006

Filed:

Mar. 20, 2001
Applicants:

Chandra Venkatraman, Williamsville, NY (US);

Cyndi L. Ackerman, Depew, NY (US);

Inventors:

Chandra Venkatraman, Williamsville, NY (US);

Cyndi L. Ackerman, Depew, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a material including carbon, oxygen, silicon and hydrogen and having a dielectric constant of from about 2.1 to about 3.0 where an FTIR scan of the material includes at least two major peaks signifying Si—CHbonding. The invention further relates to a material which has a variable dielectric constant through the thickness of the material. Another aspect of the invention is the method of making the material.


Find Patent Forward Citations

Venkatraman, Chandra. (2006). Materials having low dielectric constants and method of making (U.S. Patent No. 6998636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6998636

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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