The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Apr. 23, 2003
Martha R. Krueger, Allen, TX (US);
Andrew N. Macinnes, Allen, TX (US);
Martha R. Krueger, Allen, TX (US);
Andrew N. MacInnes, Allen, TX (US);
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Abstract
A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.