The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Aug. 26, 2003
Bernhard Sell, Portland, OR (US);
Annette Sänger, Dresden, DE;
Dirk Schumann, Schönfliess, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The present invention relates to a novel method for fabricating a storage capacitor designed as a trench or a stacked capacitor and is used in particular in a DRAM memory cell. The method includes steps of forming a lower, metallic capacitor electrode, a storage dielectric and an upper capacitor electrode. The lower, metallic capacitor electrode is formed in a self-aligned manner on a silicon base material in such a way that uncovered silicon regions are first produced at locations at which the lower capacitor electrode will be formed, and then metal silicide is selectively formed on the uncovered silicon regions.