The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Dec. 30, 2003
Cheolsoo Park, Seoul, KR;
Cheolsoo Park, Seoul, KR;
Dongbu Anam Semiconductor, Inc., Seoul, KR;
Abstract
A method for fabricating a transistor in a semiconductor device is disclosed. An example method forms an isolation region in a semiconductor substrate and sequentially deposits a pad oxide layer, a pad nitride layer and a first oxide layer on the substrate and the isolation region. The example method also patterns the first oxide layer and pad nitride layer to form a gate electrode, deposits a doped poly silicon layer, forms a doped polysilicon sidewall on the pad nitride layer and the first oxide layer, etches the pad oxide layer, sequentially deposits and planarizing a gate isolation layer, a gate nitride layer and a metal layer on the substrate to form the gate electrode. In addition, the example method forms a source, a drain, a gate plug, a source plug and a drain plug, respectively.