The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2006

Filed:

May. 23, 2003
Applicant:

Karen H R Kirmse, Richardson, TX (US);

Inventor:

Karen H R Kirmse, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 25/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for forming a via (e.g., a trench, via or contact) in a substrate. The method, in one embodiment of the invention, includes patterning an openingin a photoresist layerlocated over an intermediate layer located over a substrate. In that particular embodiment the openinghas a predetermined width. The method may further include etching into the intermediate layersuch that an intermediate openingis formed, the intermediate openinghaving a decreasing width that terminates at a targeted widthless than the predetermined width. Additionally, the method may include continuing the etching within the intermediate openingand at least partially into the substrateto form a via openingin the substrate. In this particular embodiment, the widthof the via openingis substantially equal to the targeted width


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Kirmse, Karen H R. (2006). Method for forming a via in a substrate (U.S. Patent No. 6998221). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6998221

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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