The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2006
Filed:
Mar. 21, 2002
Applicants:
Heikki Kuisma, Helsinki, FI;
Juha Lahdenperä, Espoo, FI;
Risto Mutikainen, Espoo, FI;
Inventors:
Assignee:
VTI Technologies Oy, Vantaa, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer () is formed by etched opening at least one spring element configuration () and at least one seismic mass () connected to said spring element configuration (). According to the invention, the openings and trenches () extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration () is based on wet etch methods.