The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2006

Filed:

Nov. 14, 2002
Applicants:

Yoshiyuki Imanaka, Kanagawa, JP;

Ichiro Saito, Kanagawa, JP;

Teruo Ozaki, Kanagawa, JP;

Muga Mochizuki, Kanagawa, JP;

Takaaki Yamaguchi, Kanagawa, JP;

Inventors:

Yoshiyuki Imanaka, Kanagawa, JP;

Ichiro Saito, Kanagawa, JP;

Teruo Ozaki, Kanagawa, JP;

Muga Mochizuki, Kanagawa, JP;

Takaaki Yamaguchi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B41J 2/05 (2006.01);
U.S. Cl.
CPC ...
Abstract

A base plate for use in a recording head, which is used by an ink jet head for printing by discharging ink onto a recording medium, the recording head being provided with energy converting element for discharging the ink by generating a bubble in the ink by converting electric energy to thermal energy, and an anti-cavitation film to protect the energy converting element from shocks generated at the time of bubble growth and extinction, the anti-cavitation film being used as electrodes for detecting the state of the ink by energizing the ink. The base plate comprises a first diode having the a cathode thereof connected to the anti-cavitation film and an anode thereof connected to a ground potential; and a second diode having the anode thereof connected to the anti-cavitation film and the cathode thereof connected to a power supply potential. With the structure thus arranged, it is made possible to reduce the possibility that the circuit element formed on a semiconductor substrate is destroyed by electrostatic discharge.


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