The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Dec. 31, 2003
Jin-hong Ahn, Ichon-shi, KR;
Sang-hoon Hong, Ichon-shi, KR;
Young-june Park, Ichon-shi, KR;
Sang-don Lee, Ichon-shi, KR;
Yil-wook Kim, Ichon-shi, KR;
Gi-hyun Bae, Ichon-shi, KR;
Jin-Hong Ahn, Ichon-shi, KR;
Sang-Hoon Hong, Ichon-shi, KR;
Young-June Park, Ichon-shi, KR;
Sang-Don Lee, Ichon-shi, KR;
Yil-Wook Kim, Ichon-shi, KR;
Gi-Hyun Bae, Ichon-shi, KR;
Hynix Semiconductor, Inc., , KR;
Abstract
A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.