The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2006

Filed:

Nov. 04, 2003
Applicants:

Richard Fastow, Cupertino, CA (US);

Sheunghee Park, Pleasanton, CA (US);

Inventors:

Richard Fastow, Cupertino, CA (US);

Sheunghee Park, Pleasanton, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Multiple passes of the loop of program verify and programming steps are performed for minimizing the effects of FG—FG coupling during programming a flash memory device. In one embodiment of the present invention, for programming a group of at least one flash memory cell of an array, a first pass of program verify and programming steps is performed until each flash memory cell of the group attains a threshold voltage that is at least X % of a program verify level but less than the program verify level. Then, a second pass of program verify and programming steps are performed until each flash memory cell of the group attains substantially the program verify level for the threshold voltage.


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