The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Mar. 28, 2001
Yoshihiko Seyama, Kawasaki, JP;
Atsushi Tanaka, Kawasaki, JP;
Keiichi Nagasaka, Kawasaki, JP;
Yutaka Shimizu, Kawasaki, JP;
Shin Eguchi, Kawasaki, JP;
Hitoshi Kanai, Kawasaki, JP;
Reiko Kondo, Kawasaki, JP;
Hitoshi Kishi, Kawasaki, JP;
Junya Ikeda, Kawasaki, JP;
Yoshihiko Seyama, Kawasaki, JP;
Atsushi Tanaka, Kawasaki, JP;
Keiichi Nagasaka, Kawasaki, JP;
Yutaka Shimizu, Kawasaki, JP;
Shin Eguchi, Kawasaki, JP;
Hitoshi Kanai, Kawasaki, JP;
Reiko Kondo, Kawasaki, JP;
Hitoshi Kishi, Kawasaki, JP;
Junya Ikeda, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.