The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2006

Filed:

Jan. 30, 2003
Applicants:

Michio Murata, Yokohama, JP;

Takeyoshi Masuda, Yokohama, JP;

Inventors:

Michio Murata, Yokohama, JP;

Takeyoshi Masuda, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01); H01L 29/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor optical integrated devicecomprises a light-emitting element portion, modulation element portion, and separation portionon a substrate. Light-emitting element portioncomprises a semiconductor laser element portion, and modulation element portioncomprises a modulation element portion. Separation portionis formed between light-emitting element portionand modulation element portion. In separation portion, a semiconductor embedded portionis provided in a second clad layer. Whereas second clad layerconsists of p-type InP, semiconductor embedded portionconsists of n-type InP. Hence semiconductor embedded portionhas the effect of impeding the leakage current flowing between electrodesand. As a result, the leakage current occurring between electrodesandvia second clad layeris reduced.


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