The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Feb. 24, 2004
Chih-feng Huang, Jhubei, TW;
Ta-yung Yang, Milpitas, CA (US);
Jenn-yu G. Lin, Taipei, TW;
Tuo-hsin Chien, Tucheng, TW;
Chih-Feng Huang, Jhubei, TW;
Ta-yung Yang, Milpitas, CA (US);
Jenn-yu G. Lin, Taipei, TW;
Tuo-Hsin Chien, Tucheng, TW;
System General Corp., Taipei Hsien, TW;
Abstract
A high voltage LDMOS transistor according to the present invention includes a P-field and divided P-fields in an extended drain region of a N-well. The P-field and divided P-fields form junction-fields in the N-well, in which a drift region is fully depleted before breakdown occurs. Therefore, a higher breakdown voltage is achieved and a higher doping density of the N-well is allowed. Higher doping density can effectively reduce the on-resistance of the LDMOS transistor. Furthermore, the N-well generated beneath a source diffusion region provides a low-impedance path for a source region, which restrict the transistor current flow in between a drain region and a source region.