The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Dec. 11, 2003
Mitsuru Mariyama, Kitakatsuragi-Gun, JP;
Masaru Kubo, Kitakatsuragi-Gun, JP;
Mitsuru Mariyama, Kitakatsuragi-Gun, JP;
Masaru Kubo, Kitakatsuragi-Gun, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A Schottky barrier diodeis formed between a P-gate diffusion regionand an N-type silicon substratein a photothyristor on a CHside and a photothyristor on a CHside. With this arrangement, the injection of minority carriers from the P-gate diffusion regionto the N-type silicon substrateis restrained to reduce the amount of remaining carriers, and an excessive amount of carriers remaining in the N-type silicon substrateduring commutation has a reduced chance of moving toward the opposite channel side, allowing the commutation characteristic to be improved. Therefore, by a combination with an LED, there can be provided a light-fired coupler for firing and controlling the load.