The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Jun. 06, 2003
Tsuyoshi Tojo, Tokyo, JP;
Yoshifumi Yabuki, Shiratori Shiroishi-shi, Miyagi, JP;
Shinichi Ansai, Shiratori Shiroishi-shi, Miyagi, JP;
Tomonori Hino, Tokyo, JP;
Osamu Goto, Shiratori Shiroishi-shi, Miyagi, JP;
Tsuyoshi Fujimoto, Tokyo, JP;
Osamu Matsumoto, Shiratori Shiroishi-shi, Miyagi, JP;
Motonobu Takeya, Tokyo, JP;
Yoshio Oofuji, Tokyo, JP;
Tsuyoshi Tojo, Tokyo, JP;
Yoshifumi Yabuki, Shiratori Shiroishi-shi, Miyagi, JP;
Shinichi Ansai, Shiratori Shiroishi-shi, Miyagi, JP;
Tomonori Hino, Tokyo, JP;
Osamu Goto, Shiratori Shiroishi-shi, Miyagi, JP;
Tsuyoshi Fujimoto, Tokyo, JP;
Osamu Matsumoto, Shiratori Shiroishi-shi, Miyagi, JP;
Motonobu Takeya, Tokyo, JP;
Yoshio Oofuji, Tokyo, JP;
Other;
Abstract
In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.