The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Sep. 24, 2003
Tamito Suzuki, Fukuroi, JP;
Tamito Suzuki, Fukuroi, JP;
Yamaha Corporation, Shizuoka-ken, JP;
Abstract
A polysilicon etching method capable of completely removing polysilicon residues left on the side walls of a protrusion covered with a polysilicon layer after the polysilicon layer is patterned while form anisotropy of the polysilicon layer is retained and the underlying insulating film is left unetched. After a polysilicon layer is deposited over one principal surface of a substrate, covering a protrusion, a resist layer is formed on the polysilicon layer over the protrusion. By using the resist layer as a mask, a plasma etching process is performed to pattern the polysilicon layer and form a gate electrode polysilicon layer. At a first step, the polysilicon layer is etched by using HBr and Cluntil polysilicon spacer residues appear on the side walls of the protrusion, and at a second step the polysilicon residues are removed by using HBr at a pressure of 5 to 10 mTorr.