The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Oct. 03, 2002
Katsuyuki Hironaka, Kanagawa, JP;
Masataka Sugiyama, Kanagawa, JP;
Chiharu Isobe, Tokyo, JP;
Takaaki Ami, Kanagawa, JP;
Katsuyuki Hironaka, Kanagawa, JP;
Masataka Sugiyama, Kanagawa, JP;
Chiharu Isobe, Tokyo, JP;
Takaaki Ami, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In a method for manufacturing a semiconductor storage device having a dielectric capacitor, an IrOfilm, an Ir film, an amorphous film, and a Pt film—are sequentially made on an Si substrate. The SBT film may comprise Bi, Sr, Taand O, where the atomic ratio may be within the range of 0≦Sr/Ti≦1.0, 0≦Ba/Ti≦1.0. The Pt film, the amorphous film, the Ir film, and the IrOfilm formed into a dielectric capacitor and the amorphous film is twice annealed to change its amorphous phase to a fluorite phase and then to a crystal phase of a perovskite type crystalline structure and thereby obtain the SBT film. The process may include a lower electrode made from an organic metal source material selected from a group consisting of Bi(CH), Bi(o-CH), Bi(O—CH), Bi(O—iCH), Bi(O-tCH), Bi(O-tCH), Sr(THD), Sr(THD)tetraglyme, Sr(MeC). 2THF, Ti(i-OCH), TiO(THD), Ti(TD)(i-OCH), Ta(i-OCH), Ta(iOCH)THD, Nb(i-OCH), Nb(i-OCH)THD.