The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
May. 16, 2002
Kiyoshi Yoneda, Moriguchi, JP;
Tsutomu Yamada, Moriguchi, JP;
Shinji Yuda, Moriguchi, JP;
Koji Suzuki, Moriguchi, JP;
Kiyoshi Yoneda, Moriguchi, JP;
Tsutomu Yamada, Moriguchi, JP;
Shinji Yuda, Moriguchi, JP;
Koji Suzuki, Moriguchi, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
A first contact hole is formed penetrating a gate insulating film, on which a gate electrode is formed and simultaneously a first contact is formed in the first contact hole. A second contact hole penetrating an interlayer insulating film is formed, and a second contact is formed in the second contact hole. A third contact hole is formed penetrating a planarization film, and an electrode is formed in the third contact hole. By using a plurality of contact holes for electrically connecting the electrode and a semiconductor film, the aspect ratio of each contact hole can be reduced, thereby achieving improvement in yield, high-level integration due to a reduction in difference in area between upper and bottom surfaces of the contact, and other advantageous improvements.