The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Apr. 30, 2004
Nobuaki Matsuoka, Tenri, JP;
Masaru Nawaki, Nara, JP;
Yoshinao Morikawa, Ikoma, JP;
Hiroshi Iwata, Ikoma-gun, JP;
Akihide Shibata, Nara, JP;
Kohji Hamaguchi, Tenri, JP;
Nobuaki Matsuoka, Tenri, JP;
Masaru Nawaki, Nara, JP;
Yoshinao Morikawa, Ikoma, JP;
Hiroshi Iwata, Ikoma-gun, JP;
Akihide Shibata, Nara, JP;
Kohji Hamaguchi, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.