The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Dec. 17, 2002
Jae Wook Jang, Kyungki-do, KR;
Kuk Hyun Sunwoo, Kyungki-do, KR;
Jae Wook Jang, Kyungki-do, KR;
Kuk Hyun Sunwoo, Kyungki-do, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-do, KR;
Abstract
A film bulk acoustic resonator (FBAR) includes an insulation layer on a substrate to prevent a signal from being transmitted to a substrate. The FBAR includes a portion of a membrane layer corresponding to an activation area to adjust a resonance frequency band and improve a transmission gain of the resonance frequency band, the portion of the membrane layer being partially etched to have a thickness less than the other portion of the membrane layer. A method of forming the FBAR includes forming an sacrificing layer made of polysilicon, forming an air gap using a dry etching process, and forming a via hole. The method prevents structural problems occurred in a conventional air gap forming process and provides locations and the number of the via holes to be controlled.