Semiconductor storage device

Abstract

The semiconductor storage device comprises memory cell transistors formed on a semiconductor substrate; first insulation filmscovering the top surfaces and the side surfaces of gate electrodesof the memory cell transistors; through-holesopened on first diffused layers; a second insulation filmwith through-holesopened on first diffused layersand through-holesopened on second diffused layersformed in; capacitors formed on the inside walls and the bottoms of the through-holesand including capacitor storage electrodes, connected to the first diffused layers; capacitor dielectric filmscovering the capacitor storage electrodes, and capacitor-opposed electrodescovering at least a part of the capacitor dielectric films; and, contact conducting filmsformed on the inside walls and bottoms of the through-holes, and connected to the second diffused layers. This structure of the semiconductor storage device makes it unnecessary to secure an alignment allowance for alignment of the through-holesopened on the first diffused layerand the through-holesopened on the second diffused layerwith the gate electrode, which permits the semiconductor storage device to have a small memory cell area.