The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Apr. 02, 2004
Applicants:
Sandeep Bahl, Palo Alto, CA (US);
Nicolas J. Moll, Woodside, CA (US);
Inventors:
Sandeep Bahl, Palo Alto, CA (US);
Nicolas J. Moll, Woodside, CA (US);
Assignee:
Agilent Technologies, Inc., Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/0328 (2006.01);
U.S. Cl.
CPC ...
Abstract
A heterojunction bipolar transistor (HBT), comprises a collector formed over a substrate, a base formed over the collector, an emitter formed over the base, and a tunneling suppression layer between the collector and the base, the tunneling suppression layer fabricated from a material that is different from a material of the base and that has an electron affinity equal to or greater than an electron affinity of the material of the base.