The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Oct. 31, 2003
Kulbinder K. Banger, Lakewood, OH (US);
Aloysius F. Hepp, Bay Village, OH (US);
Jerry D. Harris, Nampa, ID (US);
Michael Hyun-chul Jin, Akron, OH (US);
Stephanie L. Castro, Westlake, OH (US);
Kulbinder K. Banger, Lakewood, OH (US);
Aloysius F. Hepp, Bay Village, OH (US);
Jerry D. Harris, Nampa, ID (US);
Michael Hyun-Chul Jin, Akron, OH (US);
Stephanie L. Castro, Westlake, OH (US);
Ohio Aerospace Institute, Cleveland, OH (US);
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration, Washington, DC (US);
Abstract
A single source precursor for depositing ternary I-III-VIchalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VIstoichiometry 'built into' a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VIternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.