The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jul. 16, 2003
Applicants:
Shian-jyh Lin, Chiayl, TW;
Hai-han Hung, Taoyuan, TW;
Chung-yuan Lee, Taoyuan, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/39 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a silicon nitride layer. The method comprises providing a substrate having a silicon surface thereon, performing an ion implant process on the silicon surface, implanting nitrogen atoms into the silicon surface, and performing a thermal nitridation process and forming a silicon nitride layer on the substrate, wherein the silicon nitride layer comprises the silicon nitride formed on the silicon surface by reaction of the silicon surface with the nitrogen atoms contained therein.