The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jun. 12, 2003
Applicants:
Joo-won Lee, Suwon-si, KR;
Jae-eun Park, Yongin-si, KR;
Jong-ho Yang, Seoul-si, KR;
Kang-soo Chu, Suwon-si, KR;
Inventors:
Joo-won Lee, Suwon-si, KR;
Jae-eun Park, Yongin-si, KR;
Jong-ho Yang, Seoul-si, KR;
Kang-soo Chu, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.