The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Sep. 10, 2002
Masako Kodera, Yokohama, JP;
Yoshitaka Matsui, Yokohama, JP;
Masako Kodera, Yokohama, JP;
Yoshitaka Matsui, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Provided is a method of manufacturing a semiconductor device, comprising preparing a base comprising a semiconductor substrate having a device surface side, a p-type semiconductor layer formed on the device surface side of the semiconductor substrate, a n-type semiconductor layer which is formed on the device surface side of the semiconductor substrate and forms a p-n junction together with the p-type semiconductor layer, and wirings formed above the semiconductor substrate and electrically connected to each other via the p-n junction, applying a chemical solution containing electrolytes to a device surface of the base, the wirings being exposed at the device surface of the base, and applying a liquid selected from the group consisting of anode water, oxidizing gas-dissolved water, radical-containing water, cathode water, reducing gas-dissolved water and an organic substance-adding solution to the device surface of the base.