The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Sep. 07, 2001
Applicants:
LI Fu, Santa Clara, CA (US);
Shulin Wang, Santa Clara, CA (US);
Luo Lee, Fremont, CA (US);
Steven A. Chen, Fremont, CA (US);
Errol Sanchez, San Jose, CA (US);
Inventors:
Li Fu, Santa Clara, CA (US);
Shulin Wang, Santa Clara, CA (US);
Luo Lee, Fremont, CA (US);
Steven A. Chen, Fremont, CA (US);
Errol Sanchez, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.