The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jan. 07, 2004
Sang-hun Park, Seoul, KR;
Chung-ho Lim, Yongin-Shi, KR;
Sung-gyu Park, Yongin-Shi, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
The present invention provides a method of fabricating trench isolation structures of a semiconductor device. A conformal trench filler insulation layer is formed to fill wide and narrow trenches in a substrate. A portion of the trench filler insulation layer filling the wide trench is then removed. Next, a trench protection layer is formed on the trench filler insulation layer. The resultant structure is planarized to leave the trench protection layer over the wide width trench. Another planarization process is then carried out using the etch mask pattern and the remaining trench protection layer as a planarization stopper. Accordingly, the device isolation layer will attain a uniform planarity irrespective of the various widths of the trenches.