The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Jan. 09, 2004
Yi-chang Tsao, Hsinchu, TW;
Yi-Chang Tsao, Hsinchu, TW;
Au Optronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a low temperature polysilicon thin film transistor. The method includes steps of: first, a substrate is provided and a buffer layer is then formed over the substrate. Next, a low surface energy material layer is formed over the buffer layer and then a first amorphous silicon layer is formed on the low surface energy material layer, or on a buffer layer processed by hydrogen plasma. The first amorphous silicon layer is completely melted by a laser annealing step so that the liquid first amorphous silicon layer sequentially transforms into a number of polysilicon seeds being uniformly distributed on the low surface energy material layer. A second amorphous silicon layer is further formed over the low surface energy material layer and covers the polysilicon seeds. The laser annealing step s The second amorphous silicon layer is completely melted after the laser annealing step so that the liquid second amorphous silicon layer sequentially transforms into a polysilicon layer with the associated polysilicon seeds during crystallization.