The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Feb. 05, 2003
Hiroshi Moriya, Chiyoda, JP;
Kisho Ashida, Chiyoda, JP;
Toshinori Hirataka, Yokohama, JP;
Mamoru Morita, Hiratsuka, JP;
Hiroshi Moriya, Chiyoda, JP;
Kisho Ashida, Chiyoda, JP;
Toshinori Hirataka, Yokohama, JP;
Mamoru Morita, Hiratsuka, JP;
Hitachi, Ltd., Tokyo, JP;
OpNext Japan, Inc, Yokohama, JP;
Abstract
There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser element wherein a multiple quantum well active layer is formed on a semiconductor substrate with a crystal growth method, an insulation film is formed at the upper part of the multiple quantum well active layer, an electrode film is moreover formed on the insulation film and at least a part of the electrode film is electrically connected to the multiple quantum well active layer, distortion of the multiple quantum well active layer is controlled in the semiconductor laser element fabrication process after the process of the crystal growth method.