The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2006
Filed:
Feb. 07, 2002
Aravind Padmanabhan, Plymouth, MN (US);
Ray H. Baughman, Dallas, TX (US);
Anvar A. Zakhidov, McKinney, TX (US);
Guenadiy Lazarov, Landing, NJ (US);
Aravind Padmanabhan, Plymouth, MN (US);
Ray H. Baughman, Dallas, TX (US);
Anvar A. Zakhidov, McKinney, TX (US);
Guenadiy Lazarov, Landing, NJ (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
The invention relates to processes for the synthesis of 2-D and 3-D periodic porous silicon structures and composites with improved properties having the advantages of porous silicon and photonic bandgap materials. Photonic crystals comprise a two dimensionally periodic or three dimensionally periodic microporous structural matrix of interconnecting, crystallographically oriented, monodispersed members having voids between adjacent members, and said members additionally having randomly nanoporous surface porosity. The silicon nanofoam material shows enhanced and spectrally controlled/tunable photoluminescence and electroluminesce and finds use as transparent electrodes, high-lumonosity light emitting diodes (LEDs), wavelength division multiplexors, high-active-area catalyst supports, photonic bandgap lasers, silicon-based UV detectors, displays, gas sensors, and the like.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile