The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2006

Filed:

Jun. 18, 2003
Applicants:

Ewald Moersen, Mainz, DE;

Axel Engel, Ingelheim, DE;

Christian Lemke, Jena, DE;

Guenter Grabosch, Mainz, DE;

Inventors:

Ewald Moersen, Mainz, DE;

Axel Engel, Ingelheim, DE;

Christian Lemke, Jena, DE;

Guenter Grabosch, Mainz, DE;

Assignee:

Schott AG, Mainz, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 9/02 (2006.01); G01N 21/00 (2006.01); G01J 4/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The method for determining local structures in optical materials, especially crystals, includes observing schlieren visually in a material to be tested with divergent white light in a first step; measuring birefringence of polarized laser light in the material to determine local defects and structure faults in the material with a spatial resolution of 0.5 mm or better in a second step if the material is judged to be suitable in the first step and then interferometrically measuring the material to determine the faults in the material by interferometry in a third step if the material is judged to be suitable in the first and second steps. This method can be part of a method for making optical components, especially for microlithography.


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