The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Sep. 21, 2000
Steven A. Lytle, Orlando, FL (US);
Steven A. Lytle, Orlando, FL (US);
Agere Systems Inc., Allentown, PA (US);
Abstract
The present invention provides a method of forming integrated circuit interconnect structures wherein a passing metal feature does not include a landing pad. In an exemplary embodiment, the method includes forming a via opening through first and second dielectric layers, such as silicon dioxide layer, located over a conductive layer, such as copper, and to a first etch stop layer, such as silicon nitride, located over the conductive layer. A trench opening is then formed through the second dielectric layer and to a second etch stop layer. Once the via and trench openings are formed, an etch is conducted that etches through the first etch stop layer such that the opening contacts the underlying conductive layer.