The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2006

Filed:

Mar. 08, 2004
Applicants:

Hironobu Hanada, Hiroshima, JP;

Yasuo Koutake, Fukuoka, JP;

Inventors:

Hironobu Hanada, Hiroshima, JP;

Yasuo Koutake, Fukuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power semiconductor device according to the present invention comprises at least one insulating substrate; at least one power semiconductor element mounted on a metal pattern formed on the main surface of the insulating substrate; and a control circuit board which is arranged so that its first surface can oppose the above main surface of the insulating substrate with the power semiconductor element interposed therebetween, and which has at least one electronic component for control, mounted on a metal pattern formed on its second surface in parallel to the above first surface, and at least one through hole formed vertically to the first and second surfaces so as to electrically connect circuit patterns laminated between the first surface and the second surface, and this power semiconductor device is characterized in that the above through hole is filled with a filler.


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