The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Feb. 23, 2004
Applicant:
Shinji Fujii, Yokohama, JP;
Inventor:
Shinji Fujii, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device containing a multi-layered wiring structure formed on a semiconductor substrate, the structure including at least two wiring layers formed in an interlayer insulation layer, and each of the wiring layers including a metal wiring made of one of Cu and a Cu alloy, wherein the multi-layered wiring structure comprises a lower wiring layer formed under the interlayer insulation layer, a via buried in the interlayer insulation layer to connect an upper wiring layer and the lower wiring layer, and a dummy via buried in the interlayer insulation layer, the dummy via being not connected to the upper wiring layer.