The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Jul. 09, 2003
Evgueniy Nikolov Stefanov, Vieille Toulouse, FR;
Rene Escoffier, Mauzac, FR;
Evgueniy Nikolov Stefanov, Vieille Toulouse, FR;
Rene Escoffier, Mauzac, FR;
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Abstract
In one embodiment, an SCR device () includes a p+ wafer (), a p− layer (), an n+ buried layer () and an n− layer (). P− wells () are formed in the n− layer (). N+ regions () and p+ regions () are formed in the p− wells (). A first ohmic contact () couples one n+ regions () to one p+ region (). A second ohmic contact () couples another n+ region () to another p+ region () to provide physically and electrically symmetrical low-voltage p-n-p-n silicon controlled rectifiers. A deep isolation trench () surrounding the SCR device () and dopant concentration profiles provide a low capacitance SCR design for protecting high frequency integrated circuits from electrostatic discharges.