The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Sep. 03, 1999
Toshiro Hiramoto, Yokohama, JP;
Makoto Takamiya, Tokyo, JP;
Toshiro Hiramoto, Yokohama, JP;
Makoto Takamiya, Tokyo, JP;
The University of Tokyo, Tokyo, JP;
Abstract
A MOS transistor with a controlled threshold voltage includes a SOI which includes a substrate composed of a semi-conducting material, a single crystal layer composed of a semi-conducting material and an insulating layer interposed between the substrate and the single crystal layer. The single crystal layer is formed therein with a source region, a drain region and a surrounded region surrounded by the source region and the drain region. The surrounded region includes a depletion layer having a composition surface which is in contact with the insulating layer. The MOS transistor comprises an EIB-MOS transistor of which the substrate is adapted to be applied with a voltage of a first polarity for inducing charges of a second polarity over the composition surface of the surrounded region.