The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Oct. 03, 2003
Olof Tornblad, Los Gatos, CA (US);
Gordon MA, Phoenix, AZ (US);
Olof Tornblad, Los Gatos, CA (US);
Gordon Ma, Phoenix, AZ (US);
Infineon Technologies North America Corp., San Jose, CA (US);
Abstract
A semiconductor transistor structure includes a substrate having an epitaxial layer, a source region extending from the surface of the epitaxial layer, a drain region within the epitaxial layer, a channel located between the drain and source regions, and a gate arranged above the channel. The drain region includes a first region for establishing a contact with an electrode, a second region being less doped than the first region being buried within the epitaxial layer and extending from the first region horizontally in direction towards the gate, a third region less doped than the second region and extending vertically from the surface of the epitaxial layer and horizontally from the second region until under the gate, a top layer extending from the surface of the epitaxial layer to the second region, and a bottom layer extending from the second region into the epitaxial layer.