The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Dec. 02, 2003
Shian-jyh Lin, Chia-Yi Hsien, TW;
Sam Liao, Tai-Chung, TW;
Chia-sheng Yu, Taipei Hsien, TW;
Nanya Technology Corp., Tao-Yuan Hsien, TW;
Abstract
Afin-type trench capacitor structure includes a buried plate diffused into a silicon substrate. The buried plate, which surrounds a bottle-shaped lower portion of the trench capacitor structure, is electrically connected to an upwardly extending annular poly electrode, thereby enabling the buried plate and the annular poly electrode to constitute a large-area capacitor electrode of the trench capacitor structure. A capacitor storage node consisting of a surrounding conductive layer, a central conductive layer and a collar conductive layer encompasses the upwardly extending annular poly electrode. A first capacitor dielectric layer isolates the capacitor storage node from the buried plate. A second capacitor dielectric layer and a third capacitor dielectric layer isolate the upwardly extending annular poly electrode from the capacitor storage node.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile