The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Dec. 15, 2003
Han-mei Choi, Seoul, KR;
Young-wook Park, Gyeonggi-do, KR;
Eun-taek Yim, Gyeonggi-do, KR;
Dong-jo Kang, Gyeonggi-do, KR;
Kyoung-seok Kim, Seoul, KR;
Han-Mei Choi, Seoul, KR;
Young-Wook Park, Gyeonggi-do, KR;
Eun-Taek Yim, Gyeonggi-do, KR;
Dong-Jo Kang, Gyeonggi-do, KR;
Kyoung-Seok Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Disclosed is a method for forming a multi-layered structure having at least two films on a semiconductor substrate. The substrate is disposed on a thermally conductible stage for supporting the substrate. After the distance between the stage and the substrate is adjusted to a first interval so that the substrate has a first temperature by heat transferred from the stage, a first thin film is formed on the substrate at the first temperature. The distance is then adjusted from the first interval to a second interval so that the substrate reaches a second temperature, and then a second thin film is formed on the first thin film at the second temperature, thereby forming the multi-layered structure on the substrate. The multi-layered structure can be employed for a gate insulation film or the dielectric film of a capacitor.