The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Mar. 16, 2004
Hyun Woo Song, Daejeon-Shi, KR;
Won Seok Han, Daejeon-Shi, KR;
Jong Hee Kim, Daejeon-Shi, KR;
Young Gu Ju, Daejeon-Shi, KR;
O Kyun Kwon, Daejeon-Shi, KR;
Sang Hee Park, Daejeon-Shi, KR;
Hyun Woo Song, Daejeon-Shi, KR;
Won Seok Han, Daejeon-Shi, KR;
Jong Hee Kim, Daejeon-Shi, KR;
Young Gu Ju, Daejeon-Shi, KR;
O Kyun Kwon, Daejeon-Shi, KR;
Sang Hee Park, Daejeon-Shi, KR;
Electronics and Telecommunications Research Institute, Daejon-Shi, KR;
Abstract
Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.