The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2006
Filed:
Mar. 04, 2004
Applicants:
Chen-ming Chen, Taichung, TW;
Fang-tsun Chu, Ta Li, TW;
Jiun-jye Chang, Hsinchu, TW;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon layer is formed on a substrate, and then the silicon layer is patterned, and source regions, drain regions and connectors, all with the same conductivity, are formed. The source regions are connected with the drain regions electrically by the connectors, and short circuits are thus constructed. Then, subsequent procedures of thin film transistor fabrication are performed in turn. Finally, when the source/drain metal is patterned to form data lines, the connectors are cut off by etching as the source/drain metal is etched.