The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Oct. 30, 2002
Applicant:
Jin K. Kim, St. Louis Park, MN (US);
Inventor:
Jin K. Kim, St. Louis Park, MN (US);
Assignee:
Finisar Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
Long-wavelength VCSELs having top DBR mirrors with multiple levels. The individual levels of the DBR are comprised of different materials. The top DBR mirror level(s) forms a pillar structure and/or are defined by trenches. Top contacts are formed on the top DBR mirror below that mirror's top level. An aperture is formed in one of the DBR layers. An ion implanted region is formed in the top DBR and may extend into the active region and into part of a bottom DBR. The top DBRs are beneficially fabricated by etching parts of upper level(s) down to the lower level(s).