The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Jul. 14, 2003
Chong Cook Kim, Seoul, KR;
Ki Won Moon, Suwon, KR;
Chong Cook Kim, Seoul, KR;
Ki Won Moon, Suwon, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
A high power semiconductor laser device includes a semiconductor substrate, a lower clad layer formed on the semiconductor substrate, a lower guide layer formed on the lower clad layer, an active layer formed on the lower guide layer, an upper guide layer formed on the active layer, and an upper clad layer formed on the upper guide layer. The lower and upper clad layers have the same refractivity. The lower clad layer includes a high refractivity layer, which is spaced from the lower guide layer by a constant distance, and has a refractivity higher than that of the upper clad layer.